2008. 5. 6 1/2 semiconductor technical data KTC3003HV triple diffused npn transistor revision no : 3 switching regulator application. high voltage and high speed switching application. features excellent switching times : t on =1.1 s(typ.), t f =0.7 s(typ.), at i c =1a high collector voltage : v cbo =900v. maximum rating (ta=25 ) electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 900 v collector-emitter voltage v ceo 530 v emitter-base voltage v ebo 9 v collector current dc i c 1.5 a pulse i cp 3 base current i b 0.75 a collector power dissipation p c 1.1 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit emitter cut-off current i ebo v eb =9v, i c =0 - - 10 a dc current gain h fe (1) v ce =10v, i c =10ma 15 - 40 *h fe (2) v ce =10v, i c =0.4a 20 - 40 h fe (3) v ce =10v, i c =1a 6 - - collector-emitter saturation voltage v ce(sat) i c =0.5a, i b =0.1a - - 0.8 v i c =1.5a, i b =0.5a - - 2.5 base-emittersaturation voltage v be(sat) i c =0.5a, i b =0.1a - - 1 v i c =1a, i b =0.25a - - 1.2 collector output capacitance c ob v cb =10v, f=0.1mhz, i e =0 - 21 - pf transition frequency f t v ce =10v, i c =0.1a 4 - - mhz turn-on time t on - 1.1 - s storage time t stg - 3.0 - s fall time t f - 0.7 - s *note : h fe classification r:20 35, o:25 40 downloaded from: http:///
2008. 5. 6 2/2 KTC3003HV revision no : 3 downloaded from: http:///
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